Mos device processing

Details Mos device processing Mos device processing

H - Electricity

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L

356/128

H01L 21/336 (2006.01) H01L 21/265 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1216962

MOS DEVICE PROCESSING Abstract of the Disclosure In a metal oxide semiconductor field effect transistor fabrication process, refractory metal is deposited over designated source and drain areas within a silicon substrate. Refractory metal and silicon at the interface is then mixed by ion implantation of a heavy neutral ion species such as germanium. To minimize source/drain junction depth, the source and drain locations can be subjected to bombardment by a lighter ion such as silicon which recrystallizes silicon under the designated source and drain regions and so minimizes dopant diffusion. To render the source and drain of desired conductivity type, an ion implantation of a non neutral ion can be performed. - i - 11

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