Mosfet and method for manufacturing mosfet

Details Mosfet and method for manufacturing mosfet Mosfet and method for manufacturing mosfet

H - Electricity

01

L

H01L 29/12 (2006.01) H01L 21/318 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2736950

A MOSFET 1 includes: a silicon carbide (SiC) substrate (2) having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane, a semiconductor layer (21) formed on the main surface of the SiC substrate (2); and an insulating film (26) formed in contact with a surface of the semiconductor layer (21). The MOSFET 1 has a sub-threshold slope of not more than 0.4 V/Decade.

L'invention concerne un transistor MOS (1) qui comprend : un substrat de carbure de silicium (SiC) (2) dont l'angle d'inclinaison de sa surface principale est non inférieur à 50°, mais n'excède par 65° par rapport au plan {0001}, une couche de semi-conducteurs (21) formée sur la surface principale du substrat SiC (2) et un film isolant (26) formé de manière à être en contact avec la surface de la couche de semi-conducteurs (21). La pente sous le seuil du transistor MOS (1) n'excède pas 0,4 V/décade.

Affiliated with

Also associated with

Rating

Mosfet and method for manufacturing mosfet does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mosfet and method for manufacturing mosfet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mosfet and method for manufacturing mosfet will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1747361