B - Operations – Transporting – 32 – B
Patent
B - Operations, Transporting
32
B
B32B 3/02 (2006.01) C30B 5/00 (2006.01) H01L 21/20 (2006.01) H01L 21/36 (2006.01) H01L 29/06 (2006.01) H01L 29/20 (2006.01) H01L 29/22 (2006.01) H01L 29/26 (2006.01)
Patent
CA 2467005
A structure including a grating (43) and a semiconductor nanocrystal layer on the grating (43), can be a laser (10). The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals (32) including a Group II- VI, the nanocrystals (32) being distributed in a metal oxide matrix (33). The grating (43) can have a periodicity from 200 nm to 500 nm.
Cette structure comportant un réseau de diffraction (43) recouvert d'une couche nanocristalline semi-conductrice peut être un laser (10). La couche nanocristalline semi-conductrice peut se composer de plusieurs nanocristaux semi-conducteurs (32) comportant un composé des Groupes II VI. Ces nanocristaux (32) sont répartis dans une matrice d'oxyde métallique (33). La périodicité du réseau de diffraction (43) peut s'échelonner entre 200 et 500 nm.
Bawendi Moungi G.
Eisler Hans J.
Klimov Victor I.
Smith Henry I.
Sundar Vikram C.
Massachusetts Institute Of Technology
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
The Regents Of The University Of California
LandOfFree
Nanocrystal structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanocrystal structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanocrystal structures will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1482218