G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/12 (2006.01) B82B 3/00 (2006.01) H01L 21/00 (2006.01)
Patent
CA 2525364
A nanoimprint lithography method of fabricating a nanoadhesive includes steps of (a) preparing a substrate and a transfer stamp, said transfer stamp having a transfer face and nanometer-scale features formed on said transfer face, said nanometer- scale features having a plurality of convexities and concavities, said substrate having an etched layer; (b) proceeding a staining process to enable either of said convexities and concavities to be stained with a photoresist; (c) proceeding a transfer process to enable said nanometer-scale features to touch said etched layer to transfer said photoresist onto said etched layer; and (d) proceeding an etching process to enable parts of said etched layer that are not stained with the photoresist to be each etched for a predetermined depth. As the steps indicated above, the nanoadhesive can be produced with mass production and low cost.
Chao Chih-Yu
Hsieh Wen-Jiunn
Contrel Technology Co. Ltd.
Lee Bing-Huan
Mcfadden Fincham
LandOfFree
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