C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
149/16, 148/3.2,
C30B 23/00 (2006.01) H01L 21/306 (2006.01)
Patent
CA 1055820
Abstract of the Disclosure Surface contamination of Group III(a)-V(a) substrates prior to epitaxial growth can influence structural, optical, and electrical properties of the resulting layers. Of the common contaminants, sulfur, nitrogen, carbon, and oxygen, which are found on substrate surfaces, only carbon cannot be removed by simple heating. By passivating the substrate surface with a native oxide coating after chemical etching and before atmospheric exposure, the carbon-containing contamination can be virtually eliminated since these compounds have low sticking coefficients on the native oxide. The oxide can then be readily stripped off by heating in a vacuum to leave essentially an atomically clean substrate surface.
235225
Cho Alfred Y.
Tracy Joseph C. (jr.)
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