Negative photoresist composition

Details Negative photoresist composition Negative photoresist composition

G - Physics

03

F

G03F 7/038 (2006.01) G03F 7/004 (2006.01)

Patent

CA 2100392

ABSTRACT OF THE DISCLOSURE A negative photoresist composition suitable for use in far ultraviolet lithographies and particu- larly KrF excimer laser lithography, excellent in properties such as resolution, sensitivity, film thick- ness retention, profile, heat resistance, etc., and small in standing wave, which comprises a resin obtainable through a copolymerization of p-hydroxy- styrene and styrene, a crosslinking agent represented by the general formula (II): Image (II) wherein Z represents -NRR' and the like and R, R' and R to R4 each represents -CH2ORa and the like in which Ra is lower alkyl group, and a photo-induced acid precursor represented by the general formula (III): Image (III) wherein Y3 to Y5 each represents mono-, di- or tri- halogen-substituted alkyl group or the like.

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