Nonalloyed ohmic contacts to n-type group iii(a)-v(a)...

Details Nonalloyed ohmic contacts to n-type group iii(a)-v(a)... Nonalloyed ohmic contacts to n-type group iii(a)-v(a)...

H - Electricity

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356/174

H01L 29/20 (2006.01) H01L 21/203 (2006.01) H01L 21/285 (2006.01) H01L 29/45 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1125924

- 1 - Abstract: A nonalloyed ohmic contact to an n-type Group III(a)-V(a) compound semiconductor body is formed by epitaxially growing a Group III(a)-V(a) n++-layer doped to at least 1019 cm-3 between the semiconductor body and a metal contact layer. The metal layer forms an ohmic contact without requiring heating above the eutec- tic temperature. In order to avoid contamination of the metal-semiconductor interface, a metal contact layer may be deposited in situ after MBE growth of the n++-layer. This technique results in both a metal-semiconductor interface with smoother morphology and also an ohmic contact without heating above the eutectic temperature. These procedures are specifically described with refer- ence to the fabrication of GaAs FETs.

328207

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