C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) C23C 16/02 (2006.01) C23C 16/27 (2006.01) C23C 16/458 (2006.01) C30B 25/10 (2006.01)
Patent
CA 2125873
2125873 9313242 PCTABS00024 A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process.
Glass Jeffrey T.
Hooke William M.
Stoner Brian R.
Williams Bradley E.
North Carolina State University
Smart & Biggar
University Of North Carolina At Chapel Hill
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