Ohmic electrode for sic semiconductor, method of...

Details Ohmic electrode for sic semiconductor, method of... Ohmic electrode for sic semiconductor, method of...

H - Electricity

01

L

H01L 21/28 (2006.01)

Patent

CA 2667648

Disclosed are: an ohmic electrode (2) for a SiC semiconductor, comprising Si and Ni, or an ohmic electrode (2) for a SiC semiconductor, comprising Si and Ni and additionally comprising Au or Pt; a method for manufacturing the ohmic electrode (2); a semiconductor device using the ohmic electrode (2); and a method for manufacturing the semiconductor device.

L'invention concerne une électrode ohmique (2) pour semi-conducteur SiC, comprenant Si et Ni, ou une électrode ohmique (2) pour semi-conducteur SiC comprenant Si et Ni et de plus comprenant Au ou Pt ; un procédé de fabrication de l'électrode ohmique (2) ; un dispositif semi-conducteur utilisant l'électrode ohmique (2) ; et un procédé de fabrication du dispositif semi-conducteur.

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