H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/45 (2006.01) H01L 21/283 (2006.01) H01L 21/285 (2006.01)
Patent
CA 2300592
An ohmic electrode consists of a plurality of metal layers stacked on a p-type group III-V semiconductor crystal base material, in which a layer consisting of a group VB metal is stacked as a first layer as viewed from the side of the base material and a second layer containing Zn, for example, a third layer consisting of a refractory metal and a fourth layer consisting of Au are successively stacked on the first layer. Thus, a thin reaction layer can be formed by performing heating at a low temperature of not more than 400°C simultaneously with formation of a p-type semiconductor electrode, for obtaining a meta electrode structure of a p-type group III-V semiconductor having an excellent ohmic characteristic.
Asamizu Hirokuni
Murakami Masanori
Yamaguchi Akira
Marks & Clerk
Sumitomo Electric Industries Ltd.
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