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H01L 31/0248 (2006.01) G01J 1/02 (2006.01) H01L 21/8238 (2006.01) H01L 31/0256 (2006.01) H01L 31/0296 (2006.01) H01L 31/0328 (2006.01) H01L 31/0352 (2006.01) H01L 31/036 (2006.01) H01L 31/10 (2006.01) H01L 31/105 (2006.01) H01L 31/107 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2435675
A blue-ultraviolet on-p-GaAs substrate pin Zn1-x Mg x S y Se1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p- (ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p- ZnSe buffer layer, a p-Zn1-x Mg x S y Se1-y layer, an i-Zn1-x Mg x S y Se1-y layer, an n- Zn1-x Mg x S y Se1-y layer, an n- electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-x Mg x S y Se1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p- GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-x Mg x S y Se1-y layer, a lower doped n- -Zn1- x Mg x S y Se1-y layer, a higher doped n+-Zn1-x Mg x S y Se1-y layer, an n- electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.
Abe Tomoki
Ando Koshi
Nakamura Takao
Marks & Clerk
Sumitomo Electric Industries Ltd.
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