Photonically engineered incandescent emitter

H - Electricity – 01 – L

Patent

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H01L 33/00 (2006.01)

Patent

CA 2457224

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure (380) can be chosen to modify or suppress thermal radiation above a cut off wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three dimensional photonic crystal of a structural material, suitable for the incandescent emitter is also disclosed.

L'invention se rapporte à une incandescence photonique. Les matériaux émetteurs et la structure à cristal photonique (380) peuvent être sélectionnés de façon à modifier ou supprimer le rayonnement thermique au-delà d'une longueur d'onde critique, ce qui amène l'émetteur à émettre sélectivement dans les parties visibles et en proche infrarouge du spectre. Cette caractéristique permet d'obtenir une lampe à incandescence efficace. L'invention concerne également un procédé de fabrication d'un cristal photonique en trois dimensions d'un matériau de structure, convenant à l'émetteur à incandescence.

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