Photoresist composition

Details Photoresist composition Photoresist composition

G - Physics

03

F

G03F 7/004 (2006.01)

Patent

CA 2238246

A chemical amplifying type positive photoresist composition, excellent in various properties, and not form necking at the potion where the bottom antireflective coating and the resist film contact, which comprises (A) a resin which is converted to alkali-soluble from alkali-insoluble or alkali slightly soluble by the action of an acid, (B) an acid generator, (C) a tertiary amine compound and (D) a diphenyl sulfone compound, and a fine photoresist pattern can be formed in high precision using the photoresist composition.

Composition de photoresist positif de type à amplification chimique, possédant d'excellentes propriétés et ne présentant pas d'étranglement dans la partie où le revêtement antireflet de fond et la pellicule de resist sont en contact. Elle est constituée : A) d'une résine insoluble ou légèrement soluble en milieu alcalin, convertie, sous l'action d'un acide, en résine soluble en milieu alcalin; B) d'un générateur d'acide; C) d'une amine tertiaire; D) d'une diphénylsulfone. Grâce à cette composition de photoresist, on peut obtenir avec une grande précision de fins motifs dans le photoresist.

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