Photoresist composition

Details Photoresist composition Photoresist composition

G - Physics

03

F

G03F 7/004 (2006.01)

Patent

CA 2238244

A chemical amplifying type positive photoresist composition, excellent in various properties such as film retention ratio, applicability, heat resistance, sensitivity, resolution, profile and time delay resistance, and not easily affected by environment, which comprises (A) a resin which is converted to alkali-soluble by the action of an acid, (B) an acid generator and (C) a tertiary amine compound having an ether bond; and a fine photo resist pattern can be formed in high precision using the photoresist composition.

Composition de photoresist positif de type à amplification chimique, possédant d'excellentes propriétés - notamment le taux de rétention pelliculaire, l'applicabilité, la résistance thermique, la sensibilité, la résolution, le profil et la résistance temporisée - et peu modifiée par l'environnement. Elle est constituée : A) d'une résine rendue soluble en milieu alcalin sous l'action d'un acide; B) d'un générateur d'acide; C) d'une amine tertiaire renfermant une liaison éther. Grâce à la composition de photoresist, on peut obtenir avec une grande précision de fins motifs dans le photoresist.

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