H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23
H01L 31/06 (2006.01) H01L 31/02 (2006.01) H01L 31/0296 (2006.01) H01L 31/0392 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1299716
ABSTRACT OF THE DISCLOSURE An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non- single crystal Si(C,Ge)(H,F) film.
583513
Arao Kozo
Fujioka Yasushi
Ishihara Shunichi
Kanai Masahiro
Nakagawa Katsumi
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
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