Plasma arc sintering of silicon carbide

Details Plasma arc sintering of silicon carbide Plasma arc sintering of silicon carbide

C - Chemistry, Metallurgy

04

B

25/141

C04B 35/64 (2006.01) C04B 35/56 (2006.01) C04B 35/565 (2006.01)

Patent

CA 1277487

PLASMA ARC SINTERING OF SILICON CARBIDE ABSTRACT OF THE INVENTION A process for the sintering of silicon carbide refractory or ceramic articles using plasma arc gases. In the process of the invention, a formed silicon carbide article is heated in a plasma fired furnace to a sintering temperature of between 2000°C - 2500°C at a heating rate of 300°C/hr - 2000°C/hr, and held at the sintering temperature for 0.1 - 2 hours. The enthalpy of the plasma gas is 2000 BTU/lb - 4000 BTU/lb, when nitrogen is used as the plasma gas. The total cycle time for the process of the invention, including cooling and loading, is 1.5 - 20 hours. Silicon carbide articles, produced in accordance with the invention, have high strength, high density, high corrosion resistance and high dimensional stability.

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