Plasma etch system

Details Plasma etch system Plasma etch system

H - Electricity

01

L

H01L 21/3065 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2220546

This invention relates to a plasma reactor apparatus (1) having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism (9a) and a thermally insulated wafer chuck (42). The vacuum insulated chuck (42) also results in lower energy consumption and higher throughput.

Réacteur à plasma (1) permettant d'obtenir une uniformité et un débit améliorés. L'uniformité d'attaque améliorée est obtenue par l'utilisation d'un nouveau mécanisme de distribution de gaz (9a) et d'un support de tranche à isolation thermique (42). Le support (42) isolé par le vide permet également une consommation d'énergie plus faible et un débit plus élevé.

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