Polysilicon planarization solution for planarizing low...

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H01L 21/311 (2006.01) C09K 13/02 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 2685275

A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent.

L'invention concerne une solution de planarisation fortement basique, hautement aqueuse, et un procédé pour son utilisation pour réduire ou sensiblement éliminer les protubérances ou projections s'étendant généralement vers le haut à partir d'une surface généralement plane de film de polysilicium obtenu par recuit de Poly Si à Basse Température (LTPS) d'un film de silicium amorphe déposé sur un substrat; le procédé comprend la mise en contact de la surface du film de polysilicium généralement plane avec la solution fortement basique, hautement aqueuse, pendant une durée suffisante pour graver sélectivement les protubérances ou projections à partir de la surface du film de polysilicium généralement plan sans aucune gravure significative du film de polysilicium généralement plan, ladite solution fortement basique, hautement aqueuse, étant une solution ayant un pH de 12 ou plus et comprenant de l'eau, au moins une base forte, et au moins un agent de contrôle de la vitesse de gravure.

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