Preparation of copper-indium-gallium-diselenide precursor...

Details Preparation of copper-indium-gallium-diselenide precursor... Preparation of copper-indium-gallium-diselenide precursor...

C - Chemistry, Metallurgy

23

C

C23C 28/02 (2006.01) H01L 21/14 (2006.01) H01L 21/203 (2006.01) H01L 21/205 (2006.01) H01L 21/306 (2006.01) H01L 21/363 (2006.01) H01L 21/365 (2006.01) H01L 31/0272 (2006.01) H01L 31/032 (2006.01) C25D 3/56 (2006.01)

Patent

CA 2284826

A photovoltaic cell (10) exhibiting an overall conversion efficiency of 13.6 % is prepared from a copper-indium-gallium-diselenide precursor film (18). The film (18) is fabricated by first simultaneously electrodepositing copper, indium, gallium and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film (18). The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film (18) to approximately Cu([ni_x,Gax)Se2, with the ratio of Ga/(In+Ga) being approximately 0.39.

On prépare une photopile (10) ayant un rendement de conversion global de 13,6 % à partir d'une couche (18) d'un précurseur constitué d'un diséléniure de cuivre-indium-gallium. Pour fabriquer ladite couche (18), on revêt un substrat constitué de verre/molybdène (12, 14) par électrodéposition simultanée de cuivre, d'indium, de gallium et de sélénium. La tension d'électrodéposition est une tension en courant alternatif haute fréquence superposée à une tension en courant continu, ce qui améliore la morphologie et la vitesse de croissance de la couche (18). L'électrodéposition est suivie d'un procédé physique de dépôt en phase gazeuse, ce qui permet de régler la stoechiométrie finale de la couche mince (18) sur approximativement Cu(In1-x,Gax)Se2, le rapport Ga/(In+Ga) étant de 0,39 environ.

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