Preparation of silicon carbide whiskers

Details Preparation of silicon carbide whiskers Preparation of silicon carbide whiskers

C - Chemistry, Metallurgy

01

B

C01B 31/36 (2006.01) C30B 25/00 (2006.01) C30B 29/36 (2006.01) C30B 29/62 (2006.01)

Patent

CA 2043679

1056p (FF) PATENT J. A. Jensen & Rosenthal Case 1 PREPARATION OF SILICON CARBIDE WHISKERS Abstract of the Disclosure Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multi- functional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300° to 1700°C under a non-oxidizing atmosphere.

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