Process and apparatus for purifying low-grade silicon material

Details Process and apparatus for purifying low-grade silicon material Process and apparatus for purifying low-grade silicon material

C - Chemistry, Metallurgy

01

B

C01B 33/037 (2006.01) C01B 33/02 (2006.01) C01B 33/12 (2006.01) C30B 29/06 (2006.01) F27B 7/06 (2006.01)

Patent

CA 2660386

A process and apparatus for purifying low-purity silicon material and obtaining a higher-purity silicon material is provided. The process includes providing a melting apparatus equipped with an oxy-fuel burner, and melting the low-purity silicon material in the melting apparatus to obtain a melt of higher-purity silicon material. The melting apparatus may include a rotary drum furnace and the melting of the low- purity silicon material may be carried out at a temperature in the range from 1410°C to 1700°C under an oxidizing or reducing atmosphere. A synthetic slag may be added to the molten material during melting. The melt of higher-purity silicon material may be separated from a slag by outpouring into a mould having an open top and insulated bottom and side walls. Once in the mould, the melt of higher-purity silicon material can undergo controlled unidirectional solidification to obtain a solid polycrystalline silicon of an even higher purity.

procédé et dispositif de purification de matériau en silicium de faible pureté, donnant un matériau en silicium plus pur. Le procédé consiste à fournir un appareil de fusion équipé d'un brûleur à oxy-carburant, et à assurer la fusion du matériau peu pur dans cet appareil pour donner un produit de fusion plus pur. Ledit appareil peut comprendre un four à tambour rotatif et la fusion du produit considéré peut s'effectuer à une température comprise entre 1 410° C et 1 700° C dans une atmosphère d'oxydation ou de réduction. On peut ajouter un laitier synthétique au matériau fondu durant la fusion. Le produit fondu plus pur peut être séparé d'un laitier par versement dans un moule à haut ouvert et fond et parois latérales isolés. Une fois dans le moule, ce produit peut subir une solidification unidirectionnelle contrôlée, donnant un silicium polycristallin solide de pureté encore supérieure.

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