Process for forming metal film on surface of synthetic resin...

Details Process for forming metal film on surface of synthetic resin... Process for forming metal film on surface of synthetic resin...

C - Chemistry, Metallurgy

23

C

C23C 14/20 (2006.01)

Patent

CA 2199424

A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target through an inert gas ion beam drawn out of an ion source in a vacuum vessel. An aluminum film coated matter formed by coating a surface of a synthetic resin substrate with an aluminum film, is characterized in that the aluminum film contains aluminum crystals at a portion in the film at a depth of not more than 600 .ANG. from a film surface thereof which contacts with the substrate. The aluminum crystals has a relation in which a crystal axis <111> perpendicular to a (111) plane is perpendicular or substantially perpendicular to the film surface. Also, the aluminum crystals exhibit a diffraction X-ray spectrum of a (111) plane when measured by X-ray diffraction according to a diffractometer method under the following conditions: target: Cu, X-ray type: K.alpha. ray, measurement X-ray output: voltage 40 KeV, current 30 mA, longitudinal divergence limiting Sollar's slit: horizontal type, incident height limiting slit: 5 mm, incident slit: 0.4 mm, light-receiving Sollar's slit: vertical type, width limiting slit; 5 mm, diffraction X-ray monochromator: graphite horizontal plate, and diffraction method: .theta./2.theta. method.

Cette invention concerne une technique de dépôt d'un film métallique à haute réflectivité et excellentes propriétés d'adhérence sur un substrat en résine synthétique même en couche mince. La méthode fait appel à l'érosion superficielle d'une cible métallique par bombardement d'ions de gaz inerte soutirés d'un source d'ions sous vide. Le film d'aluminium déposé sur un substrat en résine synthétique renferme des cristaux d'aluminium qui se trouvent, dans une partie du film, à au plus 600 du substrat. Les cristaux d'aluminium ont une orientation telle que leur axe <111> perpendiculaire à un plan réticulaire (111) fait un angle droit ou sensiblement droit avec la surface du film. Ces cristaux analysés par diffractomètre selon les conditions ci-après ont également un spectre de diffraction des rayons X sur un plan réticulaire (111). Conditions : cible : Cu; type de rayon X : K.alpha; caractéristiques du rayonnement X de mesure: - tension : 40 keV, intensité 30 mA; fente de Sollar de limitation de divergence longitudinale : horizontale, fente de limitation de hauteur d'incidence : 5mm; fente incidente : 0,4 mm, fente de Sollar d'admission de lumière : verticale, fente de limitation de largeur; 5 mm; monochromateur : plaque horizontale en graphite et méthode de diffraction : .theta./2.theta

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