Process for forming metal film, on surface of synthetic...

Details Process for forming metal film, on surface of synthetic... Process for forming metal film, on surface of synthetic...

C - Chemistry, Metallurgy

23

C

C23C 14/20 (2006.01) B32B 15/08 (2006.01)

Patent

CA 2065833

A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target through an inert gas ion beam drawn out of an ion source in a vacuum vessel. An aluminum film coated matter formed by coating a surface of a synthetic resin substrate with an aluminum film, is characterized in that the aluminum film contains aluminum crystals at a portion in the film at a depth of not more than 600 .ANG. from a film surface thereof which contacts with the substrate. The aluminum crystals has a relation in which a crystal axis <111> perpendicular to a (111) plane is perpendicular or substantially perpendicular to the film surface. Also, the aluminum crystals exhibit a diffraction X-ray spectrum of a (111) plane when measured by X-ray diffraction according to a diffractometer method under the following conditions: target: Cu, X-ray type: K.alpha. ray, measurement X-ray output: voltage 40 KeV, current 30 mA, longitudinal divergence limiting Sollar's slit: horizontal type, incident height limiting slit: 5 mm, incident slit: 0.4 mm, light-receiving Sollar's slit: vertical type, width limiting slit: 5 mm, diffraction X-ray monochromator: graphite horizontal plate, and diffraction method: 0/20 method. - 49 -

L'invention est un film métallique à grande réflectivité et à excellente adhésion à un substrat de résine synthétique même quand il est mince. Ce film est formé sur une surface de substrat par pulvérisation cathodique d'une cible métallique dans une chambre à vide sous l'effet d'un faisceau ionique de gaz inerte obtenu d'une source d'ions. On peut ainsi obtenir un substrat de résine synthétique à film d'aluminium caractérisé par le fait que ce film contient des cristaux d'aluminium à une profondeur ne dépassant pas 600 A° dans le film en contact avec le substrat. L'un des axes cristallins de l'aluminium perpendiculaires à un plan (111) est perpendiculaire ou essentiellement perpendiculaire à la surface du fil. Le spectre de diffraction des rayons X par un plan (111) des cristaux d'aluminium est mesuré par un diffractomètre dans les conditions suivantes : cible : Cu; type de rayons X : K ; paramètres de production des rayons X : tension de 40 keV et courant de 30 mA; divergences longitudinales limitant la fente de Sollar : type horizontal; fente de limitation de hauteur : 5 mm; fente d'incidence : 0,4 mm; fente de Sollar : type vertical; fente de limitation de largeur : 5 mm; monochromateur de diffraction de rayons X : plaque de graphite horizontale; et méthode de diffraction : 0/20.

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