C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
23/54
C30B 25/00 (2006.01) C30B 29/62 (2006.01)
Patent
CA 1253667
Abstract: Process for producing silicon carbide whisker Disclosed is a process for producing silicon carbide whisker by mixing a silicon source with carbon black and subjecting the resultant mixture to heating treatment in an inert atmosphere, which comprises using a silica recovered from geothermal hot water as said silicon source. The process of the present invention can bring about the effects such as (1) being capable of producing SiC whiskers with slender diameters and small variance of lengths, (2) contribution to effective utilization of resources by utilizing the recovered silica from geothermal hot water as the silicon source, etc. and its industrial value is great as the method for providing SiC whisker reinforcing material for various kinds of composite materials.
482694
Idemitsu Kosan Company Limited
Marks & Clerk
LandOfFree
Process for producing silicon carbide whisker does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing silicon carbide whisker, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing silicon carbide whisker will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1288528