Reactive planar magnetron sputtering of sio.sub.2

Details Reactive planar magnetron sputtering of sio.sub.2 Reactive planar magnetron sputtering of sio.sub.2

C - Chemistry, Metallurgy

23

C

204/167, 204/96.

C23C 14/34 (2006.01) C23C 14/00 (2006.01) C23C 14/10 (2006.01) C23C 14/35 (2006.01)

Patent

CA 1252417

ABSTRACT Transparent films of silicon dioxide are produced on a substrate by sputtering silicon toward the substrate from a silicon target. The target is clamped to the remainder of the cathode along substantially the entire length of its edges, by a clamp set of at least one clamp. Each clamp has an outer surface extending upwardly away from the target surface to a position thereabove. The target is furthermore covered by a baffle disposed between the entire target and the substrate. Oxygen is admitted between the substrate and baffle at a rate to oxidize silicon sputtering toward the substrate, while not oxidizing the target. An rf discharge is applied to the substrate at a power density substantially .08 to .16 watts cm-2. The substrate is dimensioned relative to the cathode, and spaced therefrom, so that the foregoing rf discharge at the substrate electrode, generates a self-bias voltage thereon, of between substantially -70 to -100 volts. The total open area of the baffle used in the foregoing method, is preferably less than 50% of the target surface.

478397

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