Reactive sputter deposition processes and equipment

C - Chemistry – Metallurgy – 23 – C

Patent

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Details

C23C 14/00 (2006.01) C23C 14/34 (2006.01)

Patent

CA 2626073

The invention is a method for obtaining a reactive sputtering process with a reduced or eliminated hysteresis behavior. This is achieved by employing a target made from a mixture of metal and compound materials. In the method according to the present invention, the fraction of compound material is large enough to eliminate or significantly reduce the hysteresis behavior of the reactive sputtering process and enable a stable deposition of compound films at a rate significantly higher than what is possible from a target completely made from compound material.

Processus de dépôt par projection réactive, une réduction ou une élimination d'un comportement d'hystérésis étant réalisée par l'emploi d'une cible constituée d'un mélange de métal et de matériaux composés. Dans le procédé selon la présente invention, la fraction de matériau composé est assez importante pour éliminer ou réduire sensiblement le comportement d'hystérésis du processus de projection réactive et permettre un dépôt stable de films de composés à un taux sensiblement plus élevé que celui possible à partir d'une cible constituée entièrement de matériau composé.

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