Reduced leakage antifuse structure and fabrication method

Details Reduced leakage antifuse structure and fabrication method Reduced leakage antifuse structure and fabrication method

H - Electricity

01

L

H01L 23/525 (2006.01)

Patent

CA 2196307

An antifuse (10) comprises an antifuse material (24) disposed between a lower conductive electrode (14) and an upper conductive electrode (26). The antifuse material (24) comprises a layer of amorphous silicon (20) disposed between two layers of silicon nitride (16, 20). A thin layer of silicon dioxide (18) is disposed between the layer of amorphous silicon (20) and one of the silicon nitride layers (16, 22).

Un antifusible (10) comprend un matériau antifusible (24) disposé entre une électrode conductrice inférieure (14) et une électrode conductrice supérieure (26). Le matériau antifusible (24) comprend une couche de silicium amorphe (20) disposée entre deux couches de nitrure de silicium (16, 20). Une couche mince de dioxyde de silicium (18) est déposée entre la couche de silicium amorphe (20) et une des couches de nitrure de silicium (16, 22).

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