Schottky barrier diode and method of producing the same

Details Schottky barrier diode and method of producing the same Schottky barrier diode and method of producing the same

H - Electricity

01

L

H01L 29/47 (2006.01) H01L 29/872 (2006.01)

Patent

CA 2652948

A Schottky barrier diode is provided with an epitaxially grown layer, which is formed on a substrate and has a mesa section, and a Schottky electrode formed on the mesa section. A distance between an end section of the Schottky electrode and an upper surface end section of the mesa section is 2µm or shorter. With a distance (x) of 2µm or shorter, the Schottky barrier diode having a remarkably reduced leak current, an improved breakdown voltage and excellent withstand voltage characteristics is provided.

L'invention concerne une diode à barrière Schottky qui est munie d'une couche à accroissement épitaxial, qui est formée sur un substrat et présente une section mesa, et une électrode Schottky formée sur la section mesa. La distance entre un tronçon d'extrémité de l'électrode Schottky et un tronçon d'extrémité de surface supérieure de la partie mesa est d'au plus 2 µm. Avec une distance (x) d'au plus 2 µm, il est possible de proposer une diode à barrière Schottky ayant des caractéristiques de courant de fuite remarquablement réduit, de tension de claquage améliorée et d'excellente tension de tenue.

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