Schottky field effect semiconductor device

Details Schottky field effect semiconductor device Schottky field effect semiconductor device

H - Electricity

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356/149, 345/27,

H01L 29/76 (2006.01) H01L 29/201 (2006.01) H01L 29/43 (2006.01) H01L 29/47 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1240406

- 8 - SEMICONDUCTOR DEVICE STRUCTURE Abstract Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.

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