C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
32/23, 117/81
C23C 16/44 (2006.01) C23C 16/00 (2006.01) C23C 16/04 (2006.01) C23C 16/458 (2006.01) C23C 16/54 (2006.01)
Patent
CA 2028438
ABSTRACT OF THE DISCLOSURE A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.
Goela Jitendra Singh
Keeley Joseph T.
Pickering Michael A.
Taylor Raymond L.
Cvd Inc.
Gowling Lafleur Henderson Llp
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