Selective area chemical vapor deposition

C - Chemistry – Metallurgy – 23 – C

Patent

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32/23, 117/81

C23C 16/44 (2006.01) C23C 16/00 (2006.01) C23C 16/04 (2006.01) C23C 16/458 (2006.01) C23C 16/54 (2006.01)

Patent

CA 2028438

ABSTRACT OF THE DISCLOSURE A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.

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