Selective doping of a material

C - Chemistry – Metallurgy – 03 – C

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Details

C03C 17/09 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2574771

The invention relates to a method of selective doping of a material by a) radiating a predetermined pre-treated pattern/region into the material, b) treating the material for producing reactive groups in the pre-treated pattern/region, and c) doping the material by the atomic layer deposition method for producing a pattern/region doped with a dopant in the material. The invention further relates to a selectively doped material, a system for preparing a selectively doped material, and use of said method.

L'invention concerne un procédé de dopage sélectif d'un matériau par : a) émission de rayonnement sur un motif/une région prétraité(e) prédéterminé(e) dans le matériau, b) traitement du matériau pour produire des groupes réactifs dans le motif/la région prétraité(e) et, c) dopage du matériau par le procédé de dépôt de couches atomiques pour produire un motif/une région dopé(e) à l'aide d'un dopant dans le matériau. L'invention concerne également un matériau sélectivement dopé, un système de préparation d'un matériau sélectivement dopé, ainsi que l'utilisation dudit procédé.

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