Self-registration method of manufacturing a semiconductor...

Details Self-registration method of manufacturing a semiconductor... Self-registration method of manufacturing a semiconductor...

H - Electricity

01

L

356/136

H01L 23/532 (2006.01) H01L 21/033 (2006.01) H01L 21/225 (2006.01) H01L 21/331 (2006.01)

Patent

CA 1243131

ABSTRACT: For providing semiconductor zones (16, 18, 26) and contact metallization (19, 27) within an opening (9) in a self-registered manner, which opening is provided along its edge with polycrystalline connection parts (10) which are separated by an insulating material (15) from the metalliza- tion (19, 27), a protective layer (11) is formed which is maintained within the opening (9) until within this opening (9) the connection parts (10) are formed by anisotropic etching from a uniform layer of polycrystalline semiconductor material (10). The method is suitable for the manufacture of both bipolar transistors and field effect transistors.

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