Semiconductor device

H - Electricity – 01 – L

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Details

H01L 23/12 (2006.01) C08J 5/24 (2006.01) C08L 63/00 (2006.01) H01L 21/60 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)

Patent

CA 2630824

Provided is a technology of suppressing semiconductor breakage due to a temperature change. For flip chip mounting a silicon chip on a build-up multilayer substrate employing a structure having a thinned core material, the core material having a small linear expansion coefficient is used for the multilayer substrate, the linear expansion coefficient of an underfill material and a glass transition point are suitably designed, corresponding to the thickness and the linear expansion coefficient of the core material. Thus, a stress inside a semiconductor package generated by deformation or the like of the multilayer substrate due to the temperature change is modified, and breakage of the semiconductor package due to the temperature change is suppressed.

La présente invention concerne une technologie de suppression de rupture de semi-conducteurs due à un changement de température. Pour la connexion par billes d'une puce de silicium sur un substrat multicouche de préparation utilisant une structure ayant un matériau de noyau aminci, le matériau de noyau présentant un faible coefficient de dilatation linéaire, le coefficient de dilatation linéaire d'un matériau à base de résine de type <=underfill>= et un point transition vitreuse sont conçus de manière appropriée, correspondant à l'épaisseur et au coefficient de dilatation linéaire du matériau de noyau. Ainsi, la contrainte à l'intérieur du boîtier semi-conducteur générée par déformation ou analogue du substrat multicouche due au changement de température est supprimée.

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