H - Electricity – 01 – G
Patent
H - Electricity
01
G
H01G 17/00 (2006.01) H01L 21/02 (2006.01) H01L 27/00 (2006.01) H01L 27/06 (2006.01)
Patent
CA 2271790
A semiconductor device includes a capacitor having a pair of electrodes opposite to each other through a dielectric layer, and an element other than the capacitor, both of which are formed on a semiconductor substrate. An ohmic electrode of the element and one of the electrodes of the capacitor are formed of the same metallic material.
Murata Manufacturing Co. Ltd.
Sim & Mcburney
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