H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/78 (2006.01) H01L 21/20 (2006.01) H01L 21/336 (2006.01)
Patent
CA 2636313
MOSFET (30) comprises an SiC film (11). The SiC film (11) has a facet on its surface. The length of one period of the facet is not less than 100 nm, and the facet functions as a channel (16). The process for producing MOSFET (30) comprises the steps of forming an SiC film (11), heat treating the SiC film (11) in such a state that Si is fed onto the surface of the SiC film (11), and bringing the facet provided on the surface of the SiC film (11) by the heat treatment step to a channel (16). According to the above constitution, the properties can be satisfactorily improved.
Un transistor MOS (30) comprend un film de SiC (11). Le film de SiC (11) comporte une face sur sa surface. La longueur d'une période de la face est supérieure à 100 nm, et la face fonctionne comme un canal (16). Le procédé de fabrication du transistor MOS (30) comprend les étapes qui consistent à former un film de SiC (11), à faire subir au film de SiC (11) un traitement thermique dans un état tel que le Si est amené sur la surface du film de SiC (11), et à amener la face fournie à la surface du film de SiC (11) à l'étape du traitement thermique à un canal (16). Selon la constitution ci-dessus, les propriétés peuvent être améliorées de manière satisfaisante.
Masuda Takeyoshi
Matsukawa Shinji
Marks & Clerk
Sumitomo Electric Industries Ltd.
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