H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/04 (2006.01) H01L 31/0216 (2006.01) H01L 31/0224 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1232051
ABSTRACT OF THE DISCLOSURE A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interracial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.
443019
Kanamori Hideto
Nakano Toshio
Sasano Akira
Seki Koichi
Shimomoto Yasuharu
Hitachi Ltd.
Kirby Eades Gale Baker
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