Semiconductor device having a nitride-based hetero-structure...

Details Semiconductor device having a nitride-based hetero-structure... Semiconductor device having a nitride-based hetero-structure...

H - Electricity

01

L

H01L 33/00 (2006.01) H01L 21/203 (2006.01) H01L 21/36 (2006.01) H01L 29/12 (2006.01) H01L 29/15 (2006.01) H01L 29/205 (2006.01) H01S 5/00 (2006.01) H01L 21/20 (2006.01) H01L 29/20 (2006.01)

Patent

CA 2441877

The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride- surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.

Affiliated with

Also associated with

Rating

Semiconductor device having a nitride-based hetero-structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a nitride-based hetero-structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a nitride-based hetero-structure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2089758