Semiconductor device having a reduced surface field strength

Details Semiconductor device having a reduced surface field strength Semiconductor device having a reduced surface field strength

H - Electricity

01

L

356/27, 356/58

H01L 29/36 (2006.01) H01L 21/761 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1201816

11 ABSTRACT: A semiconductor device of the RESURF type having a substrate region (2) and a semiconductor layer (3) form- ing therewith a p-n junction (5) and of a conductivity type opposite to the substrate region (2), in which at lease a zone (8) of a semiconductor circuit element is present. The semiconductor layer (3) is depleted at least locally throughout its thickness at a reverse voltage across the p-n junction (5) which is lower than the break- down voltage. According to the invention the doping con- centration of the semiconductor layer (3) is so high that at the breakdown voltage the depletion zone of the p-n junction (5) extends only over a part of the thickness of the semiconductor layer (3), while a field electrode (11) is provided which is separated from the semiconductor layer (3) by a barrier layer (12) and which, with respect to the semiconductor layer (3), at least at a high voltage across the semiconductor circuit element, has a potential of the same sign as that of the substrate region (2).

420813

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