Semiconductor integrated circuit capacitor

Details Semiconductor integrated circuit capacitor Semiconductor integrated circuit capacitor

H - Electricity

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L

356/25

H01L 21/70 (2006.01) H01L 21/02 (2006.01)

Patent

CA 1199423

- 11 - SEMICONDUCTOR INTEGRATED CIRCUIT CAPACITOR Abstract Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphene at a temperature in the range from about 570 degrees C to 595 degrees C. These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.

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