Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/33

H01S 5/323 (2006.01) H01S 5/22 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1125425

- 1 - Abstract: The invention relates to a semiconductor laser device having a shortened oscillation wave length. This semi- conductor laser device has a doublehetero structure and comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaA?AsP crystal of one conducting type, an active layer formed on the first cladding layer and com- posed of a GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaA?AsP crystal of the conducting type reverse to that of the first cladd- ing layer. Naturally, the cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than in the active layer. The semicon- ductor laser device can be used in optical information processing devices, video discs and the like as small, high-efficiency light sources. - 1 -

331458

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