H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/227 (2006.01)
Patent
CA 1150808
SEMICONDUCTOR LASER DEVICE ABSTRACT OF THE DISCLOSURE A semiconductor laser device includes an active region consisting of a semiconductor material and a semi- conductor region consisting of a material having a different composition from that of the active region and confining the active region. The invention provides at least one p-n junction formed inside the confining region in parallel with the active region. The impurity concentration of the region having the p-n junction is such that current can flow through regions other than the active region via the p-n junction at a field strength below that causing degradation of the device. As a result, the device does not undergo catastrophic degradation even when a current higher than the rated value is applied thereto.
361212
Doi Atsutoshi
Hirao Motohisa
Mori Takao
Nakamura Michiharu
Takeda Yutaka
Hitachi Ltd.
Kirby Eades Gale Baker
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