H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/10 (2006.01) H01S 5/065 (2006.01) H01S 5/125 (2006.01) H01S 3/094 (2006.01) H01S 3/0941 (2006.01) H01S 5/12 (2006.01) H01S 5/14 (2006.01)
Patent
CA 2374602
A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient .kappa.i of the partial diffraction grating.
Funabashi Masaki
Tsukiji Naoki
Yoshida Junji
Fetherstonhaugh & Co.
The Furukawa Electric Co. Ltd
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