Semiconductor photodiodes and method of manufacturing the same

Details Semiconductor photodiodes and method of manufacturing the same Semiconductor photodiodes and method of manufacturing the same

H - Electricity

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H01L 27/14 (2006.01) H01L 31/00 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1068806

Specification Title of the Invention Semiconductor Photodiodes and Method of Manufacturing the Same Abstract of the Disclosure The impurity concentration distribution of a- diode is varied such that the concentration in a first region contiguous to the junction is low, in the second region is high, in the third region is low and in the last region gradually increases in the direction away from the junction.

263362

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