H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0296 (2006.01) G01T 1/24 (2006.01) H01L 31/032 (2006.01) H01L 31/108 (2006.01)
Patent
CA 2447403
A Schottky barrier type radiation detecting element having a compound InxCdyTez comprising indium and cadmium, as means for applying a voltage to a compound semiconductor crystal principally comprising cadmium and tellurium, on one side of the compound semiconductor crystal. Percentage z of tellurium content in the compound InxCdyTezis preferably in the range of 42.9%-50% expressed in terms of the ratio of the number of atoms and percentage y of cadmium content in the compound InxCdyTezis preferably in the range of 0%-10% expressed in terms of the ratio of the number of atoms.
L'invention concerne un élément de détection de radiations de type à barrière de Schottky, comportant un composé In¿x?Cd¿y?Te¿z? comprenant de l'indium et du cadmium, comme moyen pour appliquer une tension à un cristal semiconducteur composé comprenant principalement du cadmium et du tellure, sur une face du cristal semiconducteur composé. Le pourcentage z de la proportion de tellure dans le composé In¿x?Cd¿y?Te¿z? est compris de préférence entre 42,9 et 50 %, exprimé en termes de rapport du nombre d'atomes, et le pourcentage y de la proportion de cadmium dans le composé In¿x?Cd¿y?Te¿z? est compris de préférence entre 0 et 10 %, exprimé en termes de rapport du nombre d'atomes.
Kyan Atsushi
Moriyama Miki
Murakami Masaki
Ohno Ryoichi
Acrorad Co. Ltd.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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