Silicon based conductive material and process for production...

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H01L 35/14 (2006.01) H01L 21/28 (2006.01) H01L 21/44 (2006.01) H01L 23/498 (2006.01) H01L 23/532 (2006.01) H01L 29/43 (2006.01) H01L 35/16 (2006.01) H01L 35/22 (2006.01) H01L 35/34 (2006.01)

Patent

CA 2307231

A silicon based conductive material based on a semiconductor silicon and having an electric resistivity of 10 -3 (.OMEGA. . m) or less at ambient temperature, which has been unattainable heretofore, while facilitating production and handling. An electric resistivity of -6 (.OMEGA. . m) or less, which is common for conductors, can be realized by adding relatively large quantities of various kinds of elements to silicon. The conductive material can be provided in a semiconductor silicon substrate in a desired pattern by ion beam implantation and patterning. It can be employed not only in the form of a substrate, a rod or a wire, but also in the form of fine particles dispersed in a resin or glass to be employed in various applications requiring conduction, including a conductive sheet material.

L'invention porte sur un matériau conducteur à base de silicium semi-conducteur et présentant une résistivité électrique de 10<-3> ( OMEGA . m) ou moins à la température ambiante, valeur jusqu'alors impossible à atteindre, tout en étant d'une fabrication et d'une manipulation faciles. Cette résistivité de 10<-6> ( OMEGA . m) ou moins, commune pour les conducteurs, s'obtient par l'adjonction au silicium de quantités relativement importantes de différents éléments. Le matériau conducteur peut être implanté dans le substrat de silicium avec le motif désiré à l'aide d'un faisceau d'ions. On peut l'utiliser non seulement sous forme de substrat, de barre ou de fil, mais également sous forme de fines particules dispersées dans une résine ou dans du verre, et pour diverses applications où la conduction est nécessaire, dont des feuilles de matériau conducteur.

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