Silicon device production

Details Silicon device production Silicon device production

C - Chemistry, Metallurgy

03

C

C03C 17/34 (2006.01) G02F 1/136 (2006.01) H01L 21/20 (2006.01) H01L 23/15 (2006.01)

Patent

CA 2123189

ABSTRACT A method for producing a glass panel for silicon device fabrication, which method comprises forming a noncrystalline, or mixed-phase, silicon film on a glass substrate, the glass having a strain point greater than 560°C, and subjecting the filmed glass to a heat treatment comprising heating at a temperature of at least 550°C for a period of time sufficient to convert the silicon film to polycrystalline silicon and to compact the glass.

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