Silicon-on-insulator substrates annealed in polysilicon tube

Details Silicon-on-insulator substrates annealed in polysilicon tube Silicon-on-insulator substrates annealed in polysilicon tube

H - Electricity

01

L

356/176, 356/187

H01L 21/76 (2006.01)

Patent

CA 1270964

Abstract of the Disclosure A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon dioxide buried in the silicon substrate and annealing the implanted substrate at high temperature in a novel furnace incorporating a polysilicon tube to constrain the annealing temperature to be uniform over the entire substrate. The silicon-on-insulator substrate is particularly useful for the manufacture of semiconductor devices formed in thin silicon films.

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