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Thomas W. Macelwee

H - Electricity – 01 – L

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Country: Canada

Fabrication of stacked mos devices

H - Electricity – 01 – L
Patent

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High value resistive load for an integrated circuit

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Silicon-on-insulator substrates annealed in polysilicon tube

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Vertically integrated cmos logic gate

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Patent

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High value resistive load for an integrated circuit

H - Electricity – 01 – C
Patent

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Silicon-on-insulator substrates annealed in polysilicon tube

H - Electricity – 01 – L
Patent

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Profile ID: LFCA-PAI-P-1119191

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