Single mask via method and device

Details Single mask via method and device Single mask via method and device

H - Electricity

01

L

H01L 21/768 (2006.01) H01L 21/308 (2006.01) H01L 21/467 (2006.01) H01L 23/535 (2006.01)

Patent

CA 2543100

ABSTRACT: A method of connecting elements such as semiconductor devices and a device having connected elements such as semiconductor devices. A first element having a first contact structure is bonded to a second element having a second contact structure. A single mask is used to form a via in the first element to expose the first contact and the second contact. The first contact structure is used as a mask to expose the second contact structure. A contact member is formed in contact with the first and second contact structures. The first contact structure may have an aperture or gap through which the first and second contact structures are connected. A back surface of the first contact structure may be exposed by the etching.

Procédé permettant de connecter des éléments tels que des dispositif à semi-conducteurs., et dispositif comportant des éléments connectés tels que des dispositifs à semi-conducteur. Un premier élément doté d'une première structure de contact est collé à un second élément présentant une seconde structure de contact. Un seul masque permet de former dans le premier élément un trou de liaison servant à exposer le premier et le second contact. La première structure de contact s'utilise comme masque pour l'exposition de la seconde structure de contact. Un élément de contact vient en contact avec les première et seconde structures de contact. La première structure de contact peut présenter une ouverture ou un jour par lesquels sont connectées les première et seconde structures de contact. Une surface postérieure de la première structure de contact peut être exposée par gravure.

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