C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
149/21
C03C 15/00 (2006.01) C04B 41/53 (2006.01) C09K 13/08 (2006.01) H01L 21/311 (2006.01)
Patent
CA 1241898
ABSTRACT SOLUBLE SURFACTANT ADDITIVES FOR AMMONIUM FLUORIDE/HYDROFLUORIC ACID OXIDE ETCHANT SOLUTIONS Silicon trioxide etching solutions with soluble surfact additives are provided. The improved silicon dioxide etchants are produced by adding soluble per- fluronated surfactant additives to standard oxide etch- ants in the manufacture of integrated circuits. These surfactant additives are unique because they remain dis- solved in the oxide etchant (ammonium fluoride/hydro- fluoric acid mixture) even after 0.2 micron filtra- tion. In addition, the filtered solutions retain their surface active properties and are low in metallic ion impurities. The surfactant additives provide etchant solutions with lower surface tensions, which improves substrate wetting and yields better etchant perfor- mance. The surfactant does not leave residues or adversely affect etchant profiles.
477790
Hopkins Ronald J.
Kieta Harold J.
Thomas Evan G.
General Chemical Corporation
Gowling Lafleur Henderson Llp
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